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Browse Prior Art Database

Deposition of Silicon Dioxide

IP.com Disclosure Number: IPCOM000094223D
Original Publication Date: 1966-Jul-01
Included in the Prior Art Database: 2005-Mar-06
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Lehman, HS: AUTHOR [+3]

Abstract

Silicon dioxide is deposited by basically the following reaction. 2NO(2) + 4H(4) + SiCl(4) ---> SiO(2) + 4HCl + N(2) + 2H(2)O.

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Deposition of Silicon Dioxide

Silicon dioxide is deposited by basically the following reaction. 2NO(2) + 4H(4) + SiCl(4) ---> SiO(2) + 4HCl + N(2) + 2H(2)O.

The process can be effected in an epitaxial deposition chamber immediately following the deposition of a silicon epitaxial layer on a silicon wafer. Such is by the addition of nitrogen dioxide NO(2) to the gas flow used for epitaxial growth. This technique insures optimum surface cleanliness prior to the removal of the silicon wafer from the epitaxial chamber. This process is not extremely temperature sensitive. Therefore, a uniform silicon dioxide thickness can readily be obtained across the silicon wafer surface. Further, the process can proceed at temperatures as low as about 600 degrees C.

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