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Increasing the Stability of Semiconductor Devices

IP.com Disclosure Number: IPCOM000094234D
Original Publication Date: 1966-Jul-01
Included in the Prior Art Database: 2005-Mar-06
Document File: 2 page(s) / 24K

Publishing Venue

IBM

Related People

Leonard, RA: AUTHOR [+3]

Abstract

This method of fabrication is adaptable for increasing stability and controlling inversion in semiconductor devices, especially where the electrode is composed of aluminum.

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Increasing the Stability of Semiconductor Devices

This method of fabrication is adaptable for increasing stability and controlling inversion in semiconductor devices, especially where the electrode is composed of aluminum.

In the formation of the field effect transistor, SiO(2) film layer 10 is grown on the surface of a relatively low resistivity P-type wafer 11. Holes are etched in selected areas of film 10. Thus, N-type source and drain regions 12 and 13 are created by diffusing N-type impurity atoms through the holes using film 10 as a mask.

Metal terminals or electrodes 14 and 16 are deposited by evaporation. If a thin N-type inversion layer or channel is created between regions 12 and 13, the effective thickness of the channel can be controlled or modulated. Such is effected by the bias applied to gate electrode 15 thus providing control of current flow between regions 12 and 13.

The stability of field effect devices is closely related to the type of metal used in the gate electrode and the manner of fabricating. One of the most active and unstable field effect systems involves the deposition of aluminum gate and contact electrodes on silicon oxide and silicon, respectively. Subsequent heating during necessary processing steps produces extreme scatter in the level of inversion and zero gate conductivity.

This method involves depositing small amounts of metallic salt between gate metal 15 and SiO(2) film 10. The salt has a stabilizing effect on the field effe...