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Browse Prior Art Database

Light Emitting Diode Array

IP.com Disclosure Number: IPCOM000094299D
Original Publication Date: 1966-Aug-01
Included in the Prior Art Database: 2005-Mar-06
Document File: 2 page(s) / 39K

Publishing Venue

IBM

Related People

Yeh, TH: AUTHOR [+3]

Abstract

The solid state light-emitting diode array provides collimated light beams 1 perpendicular to the surface of the array. The latter includes mesa structures 2 having junctions 3 in a block of semiconductor material 4. Surrounding and forming the mesa structures 2 are grooves 5, the outer edges of which serve as parabolic reflectors to collimate and direct the light beam emitted from junctions 3.

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Light Emitting Diode Array

The solid state light-emitting diode array provides collimated light beams 1 perpendicular to the surface of the array. The latter includes mesa structures 2 having junctions 3 in a block of semiconductor material 4. Surrounding and forming the mesa structures 2 are grooves 5, the outer edges of which serve as parabolic reflectors to collimate and direct the light beam emitted from junctions
3.

The semiconductor material 4 can be of any suitable type, such as gallium arsenide or gallium phosphide. One method for fabricating such a light-emitting diode array is to evaporate a silicon monoxide or silicon dioxide film of approximately 3000 Angstroms on a suitably doped gallium arsenide wafer. There is then provided the desired groove pattern in the wafer by suitable photoresist and etching procedures, using an aqueous sulfuric acid and hydrogen peroxide etching solution.

When the gallium arsenide diodes are forward biased, the infrared light emitted at junctions 3 is reflected from the outer edges of grooves 5 to provide the collimated light beams 1 perpendicular to the plane surface of the array.

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