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Centerless Polishing Utilizing a Chemical Etchant

IP.com Disclosure Number: IPCOM000094305D
Original Publication Date: 1966-Aug-01
Included in the Prior Art Database: 2005-Mar-06
Document File: 2 page(s) / 35K

Publishing Venue

IBM

Related People

Fischer, G: AUTHOR [+3]

Abstract

Crystals, such as semiconductor monocrystals, are grown in substantially a rod shape and are then ground to a uniform cross-sectional diameter rod by mechanical or abrasive grinding procedures. The grinding procedure introduces a damaged layer on the periphery of the rod. This damage is removed by utilizing this device. Any suitable etchant, depending upon the crystal composition to be polished, is placed in etch reservoir 1. The etchant is slowly applied to the interface of crystal rod 2 and cloth belt 3. Rod 2 is supported on a polytetrafluorethylene coated way 4. Silicon rubber rotating drive wheel 5 forces rod 2 against belt 3 and imparts rotation to rod 2. Belt 3 rotates around drums 6 and 7. One of the latter is driven to rotate belt 3.

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Centerless Polishing Utilizing a Chemical Etchant

Crystals, such as semiconductor monocrystals, are grown in substantially a rod shape and are then ground to a uniform cross-sectional diameter rod by mechanical or abrasive grinding procedures. The grinding procedure introduces a damaged layer on the periphery of the rod. This damage is removed by utilizing this device. Any suitable etchant, depending upon the crystal composition to be polished, is placed in etch reservoir 1. The etchant is slowly applied to the interface of crystal rod 2 and cloth belt 3. Rod 2 is supported on a polytetrafluorethylene coated way 4. Silicon rubber rotating drive wheel 5 forces rod 2 against belt 3 and imparts rotation to rod 2. Belt 3 rotates around drums 6 and 7. One of the latter is driven to rotate belt 3. The etchant is fed continuously to keep a fresh solution coming in to contact with rod 2 and belt 3.

The damaged layer is removed in this manner to produce a completely damage-free rod 2.

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