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Obtaining Adherent Aluminum Oxide Thin, Films on Silicon Wafers

IP.com Disclosure Number: IPCOM000094356D
Original Publication Date: 1966-Sep-01
Included in the Prior Art Database: 2005-Mar-06
Document File: 1 page(s) / 12K

Publishing Venue

IBM

Related People

Aboaf, JA: AUTHOR

Abstract

This method is for obtaining adherent aluminum oxide thin films on silicon wafers. Because aluminum oxide has certain advantages such as very high heat conductivity and high dielectric constant, it can be utilized to better advantage than the commonly used silicon dioxide. Also, because the structure of aluminum oxide is affected by heat, it is possible to change its characteristics by a heat treatment. Aluminum oxide Al(2)O(3) films deposited at 420 degrees C by pyrolysis of an aluminum metal organic compound are amorphous. The heat treatment of this oxide at 1000 degrees C results in a crystalline oxide. The amorphous oxide is soluble in acids or alkalis while the crystalline material is insoluble.

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Obtaining Adherent Aluminum Oxide Thin, Films on Silicon Wafers

This method is for obtaining adherent aluminum oxide thin films on silicon wafers. Because aluminum oxide has certain advantages such as very high heat conductivity and high dielectric constant, it can be utilized to better advantage than the commonly used silicon dioxide. Also, because the structure of aluminum oxide is affected by heat, it is possible to change its characteristics by a heat treatment. Aluminum oxide Al(2)O(3) films deposited at 420 degrees C by pyrolysis of an aluminum metal organic compound are amorphous. The heat treatment of this oxide at 1000 degrees C results in a crystalline oxide. The amorphous oxide is soluble in acids or alkalis while the crystalline material is insoluble. The solubility of the oxide decreases with increase of the heat treating lines in the amorphous oxide and heat treat it at higher temperatures to take advantage of the high temperature properties.

During heat treatment of aluminum oxide films deposited on silicon at 420 degrees C, at and above 600 degrees C pockets appear at the interface between the aluminum oxide and the silicon. These pockets, which are a fraction of one hundredth of a millimeter in diameter, disappear when etching the oxide down to the surface of the silicon.

To provide for good adherence between the Al(2)O(3) and the silicon, a very thin, approximately 100 angstroms, oxide of silicon entirely removes these pockets. This very thin si...