Browse Prior Art Database

Fabricating Ohmic Contacts

IP.com Disclosure Number: IPCOM000094357D
Original Publication Date: 1966-Sep-01
Included in the Prior Art Database: 2005-Mar-06
Document File: 2 page(s) / 47K

Publishing Venue

IBM

Related People

Chapman, RM: AUTHOR

Abstract

This fabrication technique eliminates failures in a solid state circuitry layer that are due to discontinuities in the circuitry layer at the edge of an ohmic contact.

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Fabricating Ohmic Contacts

This fabrication technique eliminates failures in a solid state circuitry layer that are due to discontinuities in the circuitry layer at the edge of an ohmic contact.

Ohmic contacts in semiconductor devices conventionally consist of a metal contact layer that makes contact with the semiconductor device through an aperture in an overlying insulating glass layer. The ohmic contact normally has a peripheral portion overlying the glass layer adjacent the aperture. When the relatively thin circuitry pattern is joined to the ohmic contact, a discontinuity can develop where the pattern passes over the stepped edge of the ohmic contact to the insulating glass layer.

In this method, ohmic contact 10 is applied over insulating glass layer 12 and underlying silicon dioxide layer 14 in electrical contact with semiconductor element 8, as in A, in the conventional manner. Contact 10 is then subjected to an etch which eliminates the sharp peripheral corners to produce the general contour of the contact 10a as in B. Circuit pattern 16 is then deposited on glass layer 12 in contact with ohmic contact 10a, as in C. The relatively thin circuit pattern 16 does not develop discontinuities in passing over the smoothly contoured edges of ohmic contact 10a.

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