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Method for Making Contacts for Gunn Oscillators for Control Spacing to a Same Surface of a Semiconductor Specimen

IP.com Disclosure Number: IPCOM000094363D
Original Publication Date: 1966-Sep-01
Included in the Prior Art Database: 2005-Mar-06
Document File: 2 page(s) / 21K

Publishing Venue

IBM

Related People

Lanza, C: AUTHOR

Abstract

Contact 1 is initially alloyed to the surface of a semiconductor specimen, either bulk or epitaxial, and observed through a microscope. Depending on the crystal orientation of the semiconductor specimen, the alloy pattern takes one of the shapes shown in A or B. Contact 3 is then alloyed to the same surface along dotted line 5 perpendicular to one of the long faces of contact 1, causing contacts 1 and 3 to wet concurrently. Since the long faces of contacts 1 and 3 are parallel, continued alloying reduces the spacing between contacts 1 and 3. When the spacing between contacts 1 and 3 is reduced to a desired value, contacts 1 and 3 are solidified.

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Method for Making Contacts for Gunn Oscillators for Control Spacing to a Same Surface of a Semiconductor Specimen

Contact 1 is initially alloyed to the surface of a semiconductor specimen, either bulk or epitaxial, and observed through a microscope. Depending on the crystal orientation of the semiconductor specimen, the alloy pattern takes one of the shapes shown in A or B. Contact 3 is then alloyed to the same surface along dotted line 5 perpendicular to one of the long faces of contact 1, causing contacts 1 and 3 to wet concurrently. Since the long faces of contacts 1 and 3 are parallel, continued alloying reduces the spacing between contacts 1 and 3. When the spacing between contacts 1 and 3 is reduced to a desired value, contacts 1 and 3 are solidified.

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