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Passivation of Fused SiO(2) Substrate for Rare Earth Iron Garnet Films

IP.com Disclosure Number: IPCOM000094367D
Original Publication Date: 1966-Oct-01
Included in the Prior Art Database: 2005-Mar-06
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Giess, EA: AUTHOR [+3]

Abstract

Rare-earth iron garnet, particularly gadolinium-iron-garnet GdlG, is employed as a thin film on a transparent substrate in that such material has a high Faraday effect. The latter effect makes such film desirable in magneto-optical devices.

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Passivation of Fused SiO(2) Substrate for Rare Earth Iron Garnet Films

Rare-earth iron garnet, particularly gadolinium-iron-garnet GdlG, is employed as a thin film on a transparent substrate in that such material has a high Faraday effect. The latter effect makes such film desirable in magneto-optical devices.

When GdlG is deposited on fused SiO(2) glass and fired at 800-1100 degrees C, an undesirable reaction layer, as much as 10 micron thick, is produced. This reaction layer interferes with the optical properties of the GdlG film. To avoid this reaction layer, a transparent protective film of gadolinium- gallium garnet, one micron or less thick, is deposited as an interface between the GdlG and the SiO(2) substrate.

The manner of depositing the gadolinium-gallium-garnet interface is not critical and can be accomplished by conventional methods that include vacuum thermal deposition, hot spraying, sputtering or spinning. Yttrium-aluminum-garnet is another suitable interface material.

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