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Phonon Maser using Semiconductor Having Multivalley Conduction Band System

IP.com Disclosure Number: IPCOM000094389D
Original Publication Date: 1966-Oct-01
Included in the Prior Art Database: 2005-Mar-06
Document File: 2 page(s) / 19K

Publishing Venue

IBM

Related People

Zylberstein, A: AUTHOR

Abstract

N-type GaAs exhibits a multivalley conduction band system as represented by low-mass valley 1 and high-mass valley 2. Under the influence of applied electric fields, electrons can be transferred from valley 1 to valley 2 in sufficient numbers to achieve an inverted population. During the decay of electrons from valley 2 to valley 1, phonons, either acoustical or optical, are emitted so that maser operation is achieved.

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Phonon Maser using Semiconductor Having Multivalley Conduction Band System

N-type GaAs exhibits a multivalley conduction band system as represented by low-mass valley 1 and high-mass valley 2. Under the influence of applied electric fields, electrons can be transferred from valley 1 to valley 2 in sufficient numbers to achieve an inverted population. During the decay of electrons from valley 2 to valley 1, phonons, either acoustical or optical, are emitted so that maser operation is achieved.

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