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Deposited Doped Silicon Dioxide Layers

IP.com Disclosure Number: IPCOM000094404D
Original Publication Date: 1966-Oct-01
Included in the Prior Art Database: 2005-Mar-06
Document File: 2 page(s) / 53K

Publishing Venue

IBM

Related People

Munch, W: AUTHOR

Abstract

This method for producing planar transistors consists in placing a layer of doped oxide SiO(2) + Zn on N-type GaAs or SiO(2) + Sn on P-type GaAs and diffusing to attain a thin P-doped or N-doped layer in the GaAs. A layer of pure SiO(2) is then deposited on the doped oxide layer. By standard photoresist techniques, an aperture is etched through to the original surface of the GaAs wafer. In one instance, an N-type material is diffused into a P-region simultaneously causing a further diffusion of the P-region into the GaAs and producing an NPN planar transistor.

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Deposited Doped Silicon Dioxide Layers

This method for producing planar transistors consists in placing a layer of doped oxide SiO(2) + Zn on N-type GaAs or SiO(2) + Sn on P-type GaAs and diffusing to attain a thin P-doped or N-doped layer in the GaAs. A layer of pure SiO(2) is then deposited on the doped oxide layer. By standard photoresist techniques, an aperture is etched through to the original surface of the GaAs wafer. In one instance, an N-type material is diffused into a P-region simultaneously causing a further diffusion of the P-region into the GaAs and producing an NPN planar transistor.

In another instance, P-type material is diffused into an N-region producing a PNP planar transistor. The greater depth of the base adjacent the emitter is desirable in view of the low base resistance. This results from the fact that during the emitter diffusion additional impurities are delivered from the remaining doped oxide SiO(2) + Zn or SiO(2) + Sn. No delivery of the base doping substance takes place below the emitter.

The formation of the doped oxide layer of silicon dioxide plus zinc or tin is accomplished by the pyrolytic decomposition of a mixture of a suitable quantity of tin tetraethyl or zinc diethyl with silicon tetraethyl ester. Source 1 of carrier gas, which can be forming gas, is bubbled through container 2 of zinc diethyl plus N- heptane or tin tetraethyl. Another source 3 of carrier gas which can consist of forming gas or oxygen is bubbled through co...