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Producing Epitaxial Germanium Deposits

IP.com Disclosure Number: IPCOM000094409D
Original Publication Date: 1966-Oct-01
Included in the Prior Art Database: 2005-Mar-06
Document File: 2 page(s) / 29K

Publishing Venue

IBM

Related People

Hornberger, WP: AUTHOR

Abstract

This process produces epitaxial germanium deposits. The process achieves epitaxial deposition of germanium in the vicinity of 500 degrees C using special growth conditions and equipment. The essential features of the process are: 1. Orienting a germanium substrate to within 1 degrees of true ›100| growth surface, 2. Establishing a growth rate of approximately 0.05 mu/minute, such rate being obtained by use of a GeCl(4) concentration in hydrogen of approximately 0.025 mol %, 3. Providing a reaction chamber containing a germanium bed maintained at approximately 300 degrees C, and 4. Maintaining the temperature of the substrate at approximately 500 degrees C.

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Producing Epitaxial Germanium Deposits

This process produces epitaxial germanium deposits. The process achieves epitaxial deposition of germanium in the vicinity of 500 degrees C using special growth conditions and equipment. The essential features of the process are: 1. Orienting a germanium substrate to within 1 degrees of true >100| growth surface, 2. Establishing a growth rate of approximately 0.05 mu/minute, such rate being obtained by use of a GeCl(4) concentration in hydrogen of approximately 0.025 mol %, 3. Providing a reaction chamber containing a germanium bed maintained at approximately 300 degrees C, and 4. Maintaining the temperature of the substrate at approximately 500 degrees C.

The apparatus utilized consists of a packed bed of germanium 1 through which gaseous reactants GeCl(4) + H(2) are flowed from a source not shown. Germanium bed 1 is maintained at a temperature of 300 degrees C. The gaseous reactants exit from bed 1 through perforated quartz plate 2 to deposition region 3. The latter has germanium pedestal 4 and germanium wafer 5 upon which deposition takes place. Pedestal 4 is heated inductively by RF coil 6 to a temperature of approximately 500 degrees C. At this temperature, germanium is epitaxially deposited on wafer 5. The remaining products of the reaction are removed from the system via tubulation 7. Epitaxial deposits obtained from this process have mirror smooth surfaces and good crystalline perfection.

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