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A Low Temperature Technique for Selective Area Etching of Semiconductor Materials

IP.com Disclosure Number: IPCOM000094465D
Original Publication Date: 1965-Feb-01
Included in the Prior Art Database: 2005-Mar-06
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Reisman, A: AUTHOR [+2]

Abstract

This is a low temperature method for gas phase etching of semiconductor materials. Such etching technique is used to selectively etch given parts of the surface of a semiconductor during, for instance, the fabrication of planar semiconductor devices.

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A Low Temperature Technique for Selective Area Etching of Semiconductor Materials

This is a low temperature method for gas phase etching of semiconductor materials. Such etching technique is used to selectively etch given parts of the surface of a semiconductor during, for instance, the fabrication of planar semiconductor devices.

The method incorporates the following steps: (1) masking a semiconductor wafer with an inert substance such as SiO(2) on all areas which are not to be etched, (2) flowing a stream of gas, e. g., Cl(2), at an appropriate temperature over the semiconductor wafer, and (3) irradiating the wafer with light of appropriate wavelength, e. g., Xenon containing ultraviolet light, normal to the surface to be etched.

Irradiation causes photolysis of the Cl(2) which dissociates into free radicals in the vicinity of the surfaces. The free radicals either (a) react with the exposed wafer surface to produce products which are swept away in the gas stream thus effecting etching or (b) recombine on the inert surfaces and the recombined products are swept away in the gas stream.

In this method, irradiation of the Cl(2) produces high reaction rates at low temperatures thus making gas phase etching with Cl(2) practical.

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