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Formation of Polymer Films by Low Energy Electron Radiation

IP.com Disclosure Number: IPCOM000094469D
Original Publication Date: 1965-Feb-01
Included in the Prior Art Database: 2005-Mar-06
Document File: 2 page(s) / 34K

Publishing Venue

IBM

Related People

DaSilva, EM: AUTHOR [+2]

Abstract

The polymerization process is effected in vacuum chamber 1 which is initially evacuated along exhaust pipe 3.

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Formation of Polymer Films by Low Energy Electron Radiation

The polymerization process is effected in vacuum chamber 1 which is initially evacuated along exhaust pipe 3.

Substrate 5 is mounted on cooling plate 7 which is maintained between -60 degrees C. and -140 degrees C. by refrigerant passed along cooling lines 9. Gas jet 11 is positioned in close proximity to substrate 5 and connected along gas lines 13 to a reservoir, not shown, containing suitable monomeric material. The quantity of monomeric vapor passed through jet 11 is controlled by metering valve 15.

Jet 11 directs monomeric vapor onto the surface of substrate 5, as indicated by the arrows, and also does not interfere with the irradiation of such surface by electron beam source 17. Thus, a high monomeric vapor pressure is provided only in the region of substrate 5 and contamination of the remainder of the system is minimized. Irradiation of the surface of substrate by source 17 initiates the polymerization process.

The combined effect of jet 11 and the cooling of substrate 5 is to substantially increase the deposition rate of the resulting polymeric film. For example, deposition rates of 1000Ao per minute are obtained using divinyl benzene as the monomeric material.

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