Browse Prior Art Database

Doubled Diffused Injection Laser With Negative Resistance

IP.com Disclosure Number: IPCOM000094512D
Original Publication Date: 1965-Feb-01
Included in the Prior Art Database: 2005-Mar-06
Document File: 3 page(s) / 36K

Publishing Venue

IBM

Related People

Fern, RE: AUTHOR [+4]

Abstract

Lasing action is realized in the temperature range from 2 degrees K to 90 degrees K in GaAs lasers whose I-V characteristics exhibit a negative resistance. Lasing is thus achieved in a device which is electrically bistable. The structure of these diodes is described previously in the Bulletin of the American Physical Society, Serial II, Vol. 8, Pg. 201, 1962. A schematic diagram is shown in drawing A.

This text was extracted from a PDF file.
At least one non-text object (such as an image or picture) has been suppressed.
This is the abbreviated version, containing approximately 53% of the total text.

Page 1 of 3

Doubled Diffused Injection Laser With Negative Resistance

Lasing action is realized in the temperature range from 2 degrees K to 90 degrees K in GaAs lasers whose I-V characteristics exhibit a negative resistance. Lasing is thus achieved in a device which is electrically bistable. The structure of these diodes is described previously in the Bulletin of the American Physical Society, Serial II, Vol. 8, Pg. 201, 1962. A schematic diagram is shown in drawing A.

The lasing properties of such lasers are similar to those of conventional injection lasers in terms of directionality and mode structure as shown in drawing
B. The properties differ in two important respects: a) lasing takes place at some distance away from the n region and b) the threshold current exhibits only a very slight temperature dependence. The manganese or p-n junction coincides with the lower band of light while the upper band probably coincides with the zinc junction. Under lasing conditions the light is emitted at an appreciable distance away from the n region. Drawing C illustrates the relative temperature in sensitivity of the threshold current between 2 degrees K, and 90 degrees K. For comparison, there is shown the temperature dependence of the threshold current of an ordinary GaAs laser with comparable threshold current density at 90 degrees K and with similar substrate doping.

In addition to these differences in lasing properties, these diodes differ from ordinary laser diodes in their electrical properties. Unlike the usual I-V characteristics of p-n junctions, these diodes exhibit a negative resistance over a portion of their ItV curve. These characteristics have been reported previously for similar bu...