Browse Prior Art Database

Semiconductor Stock Cutting Technique

IP.com Disclosure Number: IPCOM000094530D
Original Publication Date: 1965-Feb-01
Included in the Prior Art Database: 2005-Mar-06
Document File: 2 page(s) / 45K

Publishing Venue

IBM

Related People

Kessler, H: AUTHOR [+2]

Abstract

The drawings show different stages in a method for obtaining variously configured semiconductor elements such as injection lasers and tunnel diodes.

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Semiconductor Stock Cutting Technique

The drawings show different stages in a method for obtaining variously configured semiconductor elements such as injection lasers and tunnel diodes.

In drawing A, the first step comprises positioning cleaved bar 1 which has PN junction 3 parallel to its longitudinal axis, on supporting surface 5. Surface 5 is produced by grinding flat a longitudinal portion of aluminum screw 9. Having positioned bar 1 on the flat portion of screw 9, a layer of paint or rubber cement, not shown, is applied to the entire assembly anchoring bar 1 in place. Nylon thread 10 is then wound on the bar 1 assembly masking selected portions of it at regular intervals. The spacing depends on the screw pitch.

The entire assembly its now coated with dilute paint or rubber cement 12 to allow surface tension to yield an additional protective layer 11 between the curved part of thread 10 adjacent the bar and the cleaved bar itself. Finally, the cleaved bar is subjected to a sandblasting treatment. This selectively removes the thinner layers of protective paint or cement intermediate the turns of thread 10 and leaves the exposed areas of the bar to be cut by the grit stream.

Different shapes can be produced as shown in drawing B. Such shapes are realized by varying the pitch of the screw, the duration of the sandblasting and the diameter of the nylon thread. Additionally, depending on the pressure of the sandblast and the distance of the grit gun from the clea...