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Barrel Shaped Graphite Susceptor for Epitaxial Growth

IP.com Disclosure Number: IPCOM000094545D
Original Publication Date: 1965-Mar-01
Included in the Prior Art Database: 2005-Mar-06
Document File: 2 page(s) / 30K

Publishing Venue

IBM

Related People

Ernst, E: AUTHOR [+3]

Abstract

During epitaxial growth, it is necessary to maintain some turbulence of the vapor within the deposition chamber in order to achieve even deposition. Usually, deposition apparatus employs, for example, a susceptor in the form of a rotating disk having sockets in which wafers are inserted. The sockets prevent the wafers from sliding off during rotation of the disk. The disk is preferably of graphite, a good heat conductor.

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Barrel Shaped Graphite Susceptor for Epitaxial Growth

During epitaxial growth, it is necessary to maintain some turbulence of the vapor within the deposition chamber in order to achieve even deposition. Usually, deposition apparatus employs, for example, a susceptor in the form of a rotating disk having sockets in which wafers are inserted. The sockets prevent the wafers from sliding off during rotation of the disk. The disk is preferably of graphite, a good heat conductor.

The heat is supplied by either resistance heating or an RF induction coil placed beneath the disk. A disadvantage of such a disk is that portions of the susceptor closer to the center become more readily heated than does the outer perimeter. There is a resultant lack of uniformity in the epitaxial growth on the respective wafers.

To achieve greater temperature uniformity, a graphite susceptor for epitaxial growth is formed in the shape of a cylinder. This has a vertical axis. The wafer substrates are placed in an almost vertical position in slots provided in the cylinder periphery. The inner flat surface of the slot is inclined with respect to the cylinder wall to accommodate the substrates. With such a rotating barrel-shaped susceptor, excellent temperature uniformity and a resultant excellent uniformity in epitaxial film thickness and resistivity are obtained. Autodoping of wafers is also substantially reduced by this arrangement.

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