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Low Resistance Thin Film Cadmium Sulfide Diodes

IP.com Disclosure Number: IPCOM000094616D
Original Publication Date: 1965-Apr-01
Included in the Prior Art Database: 2005-Mar-06
Document File: 2 page(s) / 18K

Publishing Venue

IBM

Related People

Thun, RE: AUTHOR [+3]

Abstract

Rectification effects are overcome with ohmic electrodes on an evaporated thin-film cadmium sulfide diode.

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Low Resistance Thin Film Cadmium Sulfide Diodes

Rectification effects are overcome with ohmic electrodes on an evaporated thin-film cadmium sulfide diode.

In the fabrication of evaporated cadmium sulfide diodes, highly oxidizing atmospheres are required. As a result, electrode materials are limited to oxidation resistant metals, which, in operation, exhibit some rectification at the cadmium sulfide electrode interface. This rectification is now reduced with the addition of lead sulfide during the evaporation of the cadmium sulfide.

The cadmium sulfide diodes are fabricated in a sandwich structure. The first layer 2 is a noble metal such as gold or platinum. At the beginning of the cadmium sulfide evaporation, a small amount of lead sulfide is injected to form a very thin low resistance region 4 next to layer 2. The thickness of layer 4 is thin. It does not extend into the cadmium sulfide film to such an extent that the bulk film resistivity of cadmium sulfide film 6 is reduced, thus impairing the blocking action between layer 6 and top electrode 8. Electrode 8 is formed from metals such as tellurium or silver.

Semiconductor materials other than lead sulfide are usable for reducing the rectification between layer 6 and electrode 2. A low band gap semiconductor material having high mobility and similar crystal structure, such as lead telluride or lead selenide, is compatible with the cadmium sulfide.

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