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RF Furnace for High Temperature Chemical Gas Solid Reactions

IP.com Disclosure Number: IPCOM000094622D
Original Publication Date: 1965-Apr-01
Included in the Prior Art Database: 2005-Mar-06
Document File: 2 page(s) / 36K

Publishing Venue

IBM

Related People

Gregor, LV: AUTHOR [+2]

Abstract

An RF furnace for high-temperature chemical gas-solid reactions consists of elongated quartz housing 1 having inlet 3 and exhaust 5 along which the desired reactive gas is directed. Exhaust 5 includes a ground quartz joint 5a to facilitate loading and unloading of housing 1.

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RF Furnace for High Temperature Chemical Gas Solid Reactions

An RF furnace for high-temperature chemical gas-solid reactions consists of elongated quartz housing 1 having inlet 3 and exhaust 5 along which the desired reactive gas is directed. Exhaust 5 includes a ground quartz joint 5a to facilitate loading and unloading of housing 1.

Annular graphite susceptor 7 is positioned about a portion of housing 1 and within quartz susceptor housing 9. RF coil 11 is positioned about susceptor housing 9 and inductively coupled to susceptor 7 so as to provide it with a uniform temperature zone 13. An inert gas is directed through susceptor housing 9 along inlet 15 and exhaust 17 to prevent oxidation of susceptor 7 at elevated temperatures.

This RF furnace is especially useful as a reactor for vapor polishing of silicon wafers. Danger from explosion is minimized. This is because the temperature zone 13 is isolated from susceptor 7 and from the atmosphere during the polishing process.

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