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Method for Use and Removal of Photosensitive Chemical Resist Layers

IP.com Disclosure Number: IPCOM000094624D
Original Publication Date: 1965-Apr-01
Included in the Prior Art Database: 2005-Mar-06
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Gregor, LV: AUTHOR [+2]

Abstract

Stripping of an exposed pattern of KODAK ORTHO RESIST (KOR)* from a sample surface subsequent to a photolithographic etching process is facilitated by heating such pattern between 180 degrees C and 200 degrees C for one half hour while exposed to ultraviolet irradiation. The sample is then immersed in an appropriate stripping solution, e.g., boiling trichloroethylene and stripper solution. Heating plus ultraviolet irradiation tends to loosen or depolymerize the KOR pattern to facilitate removal by the stripping solution. *Trademark of Eastman Kodak Co.

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Method for Use and Removal of Photosensitive Chemical Resist Layers

Stripping of an exposed pattern of KODAK ORTHO RESIST (KOR)* from a sample surface subsequent to a photolithographic etching process is facilitated by heating such pattern between 180 degrees C and 200 degrees C for one half hour while exposed to ultraviolet irradiation. The sample is then immersed in an appropriate stripping solution, e.g., boiling trichloroethylene and stripper solution. Heating plus ultraviolet irradiation tends to loosen or depolymerize the KOR pattern to facilitate removal by the stripping solution. *Trademark of Eastman Kodak Co.

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