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Technique for Bonding Thermocouples to Silicon Wafers

IP.com Disclosure Number: IPCOM000094680D
Original Publication Date: 1965-Apr-01
Included in the Prior Art Database: 2005-Mar-06
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Sopher, RP: AUTHOR

Abstract

In order to more accurately determine the temperature of a material such as a silicon wafer in a heated atmosphere it is desirable to have a thermocouple directly bonded to the wafer as distinct from having the thermocouple bonded to some other element in the atmosphere.

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Technique for Bonding Thermocouples to Silicon Wafers

In order to more accurately determine the temperature of a material such as a silicon wafer in a heated atmosphere it is desirable to have a thermocouple directly bonded to the wafer as distinct from having the thermocouple bonded to some other element in the atmosphere.

It has been found that a thermocouple can be bonded to a silicon wafer by first alloying a layer of silver to one surface of the wafer. The depth of the alloy should not be too shallow as the bond strength will be weakened. Yet when thin wafers are employed, the alloying should not be of such a depth as to penetrate through to the other side of the wafer. With such a bond between the thermocouple and the silicon wafer, temperatures can be accurately measured up to approximately 800 degrees C.

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