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Fabrication of Planar Arrays of Semiconductor Chips Separated by Insulating Barriers

IP.com Disclosure Number: IPCOM000094688D
Original Publication Date: 1965-Apr-01
Included in the Prior Art Database: 2005-Mar-06
Document File: 2 page(s) / 22K

Publishing Venue

IBM

Related People

Stern, E: AUTHOR [+2]

Abstract

In the fabrication of large, integrated circuit arrays, it is necessary to isolate either individual devices or circuits or both. This is a fabrication procedure in which a matrix of semiconductor islands surrounded by insulating barriers is formed on a planar substrate.

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Fabrication of Planar Arrays of Semiconductor Chips Separated by Insulating Barriers

In the fabrication of large, integrated circuit arrays, it is necessary to isolate either individual devices or circuits or both. This is a fabrication procedure in which a matrix of semiconductor islands surrounded by insulating barriers is formed on a planar substrate.

A single crystal semiconductor substrate with the desired surface condition is used as a starting material. A layer of insulating material such as silicon dioxide of prescribed thickness is formed on the surface by either of several known methods such as thermal oxidation, reactive sputtering, RF sputtering, pyrolytic decomposition, etc. Holes are etched through the insulation in a given pattern by either a photoetching or reverse sputtering technique. Selective epitaxial growth of the semiconductor is used to fill the holes with single crystal semiconductor, which may or may not be the same as the substrate material. By the nature of this process, the semiconductor grows in a manner such that it remains confined to the holes only. Another layer of insulator material is now deposited over the entire surface via methods mentioned. The insulation can be built up to the desired thickness. Another layer of semiconductor material of either single crystal or polycrystalline, using the same semiconductor material as the substrate or else a different semiconductor material, can be deposited by sputtering or other compati...