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Technique to Deposit Thick Films without Warping or Breaking Wafer

IP.com Disclosure Number: IPCOM000094698D
Original Publication Date: 1965-May-01
Included in the Prior Art Database: 2005-Mar-06
Document File: 2 page(s) / 22K

Publishing Venue

IBM

Related People

Kren, JG: AUTHOR

Abstract

By this arrangement, a coating is deposited on an object without its warping or cracking.

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Technique to Deposit Thick Films without Warping or Breaking Wafer

By this arrangement, a coating is deposited on an object without its warping or cracking.

A graphite or a quartz (SiO(2)) shim is used between a silicon wafer and a graphite support while a three mil or greater polycrystalline layer is epitaxially grown on the wafer. In the absence of the shim, the wafer warps or breaks. This is because of the different coefficients of expansion of the materials when the coated assembly cools.

The underlying shim is smaller in length and width than the superimposed Si wafer. The shim is five or more times thicker than the deposited film. Such arrangement avoids cracking and warping of the wafer and prevents it from being anchored to the graphite support by the deposited polycrystalline Si.

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