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Obtaining Equilibrium Phases Thin Films

IP.com Disclosure Number: IPCOM000094700D
Original Publication Date: 1965-May-01
Included in the Prior Art Database: 2005-Mar-06
Document File: 1 page(s) / 12K

Publishing Venue

IBM

Related People

Mader, SR: AUTHOR [+2]

Abstract

It is possible to obtain crystal structures which are phases close to equilibrium at relatively low temperature. This is effected by simultaneous deposition of the components from the vapor onto a substrate at temperatures which are lower than those necessary in preparing bulk materials. Structures are included that cannot be obtained in the bulk materials.

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Obtaining Equilibrium Phases Thin Films

It is possible to obtain crystal structures which are phases close to equilibrium at relatively low temperature. This is effected by simultaneous deposition of the components from the vapor onto a substrate at temperatures which are lower than those necessary in preparing bulk materials. Structures are included that cannot be obtained in the bulk materials.

The following terminology is employed in describing this method. T(A) is the transformation temperature below which a low-temperature phase (a) exists and above which a high temperature phase (beta) is the equilibrium phase. T(F) is the freezing-in temperature for the bulk material, below which diffusion is negligible and which precludes obtaining equilibrium phases. Illustratively, T(F) is the temperature at which the atom jump rate is 1 per 1000 second.

If T(F)> T(A), the a-phase cannot be obtained in bulk material. If T(F) < T(A), the a-phase is obtained by maintaining the bulk material at a temperature between T(F) and T(A).

The freezing-in temperature T(F) for thin film obtained by simultaneous deposition of the components is appreciably lower than the freezing-in temperature T(F) for bulk material.

If T(F) < T(A) < T(F), a low-temperature equilibrium phase is producible by the vapor deposition of the components which is not obtainable in bulk material.

On the CuAg binary system, for the transfer of an amorphous structure to a crystalline structure, T(F) is approxim...