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Browse Prior Art Database

Semiconductor Fabrication

IP.com Disclosure Number: IPCOM000094756D
Original Publication Date: 1965-May-01
Included in the Prior Art Database: 2005-Mar-06
Document File: 3 page(s) / 27K

Publishing Venue

IBM

Related People

Lyons, VJ: AUTHOR [+2]

Abstract

This fabrication process provides semiconductor etching prior to epitaxial growth or diffusion. The etching material has no deleterious impurities and is compatible with conventional semiconductor fabrication operations. One problem encountered in etchings of semiconductor substrates is a lack of control of impurities in the etching material, typically hydrogen chloride. Hydrogen chloride is currently available as a by-product of non-semiconductor materials. These impurities adversely affect the fabrication of semiconductor devices.

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Semiconductor Fabrication

This fabrication process provides semiconductor etching prior to epitaxial growth or diffusion. The etching material has no deleterious impurities and is compatible with conventional semiconductor fabrication operations. One problem encountered in etchings of semiconductor substrates is a lack of control of impurities in the etching material, typically hydrogen chloride. Hydrogen chloride is currently available as a by-product of non-semiconductor materials. These impurities adversely affect the fabrication of semiconductor devices.

This process overcomes the prior difficulties through use of the by-product vapors in the epitaxial growth operation in the semiconductor fabrication process. Any impurities in the by-product vapors are compatible with the semiconductor material. A closed cycle process includes two conventional epitaxial growth chambers 10 and 20. Suitable piping and valves control the introduction of vapors into the epitaxial chambers.

Initially all valves are closed. The process proceeds by opening valves 1 and 2 to pass hydrogen and silicon tetrachloride through chamber 10. Epitaxial growth proceeds by the deposition of pure silicon on the wafers placed in the chamber. As the growth process proceeds, valve 2 is closed and valves 3 and 6 are opened. This permits the effluent vapors containing hydrogen and the reaction products, primarily hydrogen chloride vapor, to enter the reaction chamber 20 with valve 4 closed. With chamber 20 at the proper operating temperature, the hydrogen chloride vapor causes etching of silicon wafers previously placed in the chamber. The reaction products are then directed through valve 5 to the atmosphere. Valve 6, which is the connection to reaction chamber 10, is closed.

Operation...