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Formation of Silicon Oxide Films by Anodic Oxidation of Silicon

IP.com Disclosure Number: IPCOM000094761D
Original Publication Date: 1965-May-01
Included in the Prior Art Database: 2005-Mar-06
Document File: 2 page(s) / 28K

Publishing Venue

IBM

Related People

Kaplan, LH: AUTHOR

Abstract

This anodization process forms thin silicon oxide films on silicon wafers useful for masking purposes, both diffusion and chemical etching purposes, and as insulating layers in the semiconductor technology. Thin silicon oxide films thus formed exhibit electrical properties similar to those of thermally-grown silicon oxide films.

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Formation of Silicon Oxide Films by Anodic Oxidation of Silicon

This anodization process forms thin silicon oxide films on silicon wafers useful for masking purposes, both diffusion and chemical etching purposes, and as insulating layers in the semiconductor technology. Thin silicon oxide films thus formed exhibit electrical properties similar to those of thermally-grown silicon oxide films.

Silicon wafer 1 is supported on member 3 as an anode in electrochemical cell
5. This includes cathode 7, for example, formed of platinum, and electrolyte solution 9. The voltage V across cell 5 is preferably in excess of thirty volts. The temperature of solution 9 is preferably in excess of 90 degrees C. to insure a fast growth rate of thin silicon oxide film 11 on wafer 1.

If desired, a pressurized system, as illustrated, allows electrolysis at temperatures above the boiling point of solution 9. Good quality silicon oxide films in excess of 3000 angstroms are grown in approximately one hour when solution 9 is an aqueous 0.05% nitric acid (HNO(3)) solution.

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