Browse Prior Art Database

Fabrication of Silicon IGFET's Utilizing Hydrogen Annealing

IP.com Disclosure Number: IPCOM000094764D
Original Publication Date: 1965-May-01
Included in the Prior Art Database: 2005-Mar-06
Document File: 2 page(s) / 20K

Publishing Venue

IBM

Related People

Balk, P: AUTHOR [+4]

Abstract

The technique improves the transconductance g(m) of insulated gate field-effect transistors, either of the NPN-type or PNP-type.

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Fabrication of Silicon IGFET's Utilizing Hydrogen Annealing

The technique improves the transconductance g(m) of insulated gate field- effect transistors, either of the NPN-type or PNP-type.

Subsequent to effecting source and drain N-type diffusions 1 and 3 in P-type silicon wafer 5 and forming silicon oxide layer 7 which serves as the final gate electrode insulation, the structure of A is heated in a hydrogen atmosphere at temperatures between 200 degrees C. and 350 degrees C. for a duration of 1/2 to 2 1/2 hours.

Then, gate electrode 9 is formed over layer 7 and registered with the conduction channel defined between source and drain diffusions 1 and 3 as in B.

The treatment provides a low temperature annealing of layer 7 to prevent shorts therethrough and degradation of underlying junctions.

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