Browse Prior Art Database

Shock Wave Device

IP.com Disclosure Number: IPCOM000094768D
Original Publication Date: 1965-May-01
Included in the Prior Art Database: 2005-Mar-06
Document File: 2 page(s) / 23K

Publishing Venue

IBM

Related People

Gunn, JB: AUTHOR [+2]

Abstract

A prior arrangement of the shock wave device has ohmic contacts from the power source. If the electric field across the semiconductor is above a threshold, an electrical shock wave propagates. For a constant voltage source, the voltage wave can be detected at any point along the semiconductor either by an ohmic contact pickup or capacitive pickup. A current wave is generated when the electrical shock wave arrives at the opposite terminal.

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Shock Wave Device

A prior arrangement of the shock wave device has ohmic contacts from the power source. If the electric field across the semiconductor is above a threshold, an electrical shock wave propagates. For a constant voltage source, the voltage wave can be detected at any point along the semiconductor either by an ohmic contact pickup or capacitive pickup. A current wave is generated when the electrical shock wave arrives at the opposite terminal.

If the source is constant current, the output is a voltage wave detectable across a load. If the electric field is below threshold but above a minimum, a pulse via the auxiliary, capacitive or ohmic, electrode initiates the shock wave which propagates.

Here, no electrodes are utilized in applying the source of electric field. If the semiconductor is toroidal, while the magnetic field through the opening is changing sufficiently, the electric field in the toroid initiates the electrical shock wave which can be detected via capacitive or ohmic pickup.

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