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Browse Prior Art Database

Thin Film Memory

IP.com Disclosure Number: IPCOM000094861D
Original Publication Date: 1965-Jun-01
Included in the Prior Art Database: 2005-Mar-06
Document File: 2 page(s) / 55K

Publishing Venue

IBM

Related People

Matick, RE: AUTHOR

Abstract

The memory system has magnetic thin films 10, having uniaxial anisotropy and deposited on, e.g., a 0.5 mil mica substrate. Balanced word lines 12 and 14 are terminated by impedance Z1. Balanced, slotted bit lines 16 and 18 are terminated by impedance Z2. Figure-8 sense lines 20 and 22 cooperate to provide low noise characteristics in large magnetic film memories. In A, a plan view of the system is shown. In B, there is a side view. In C, there is a top view.

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Thin Film Memory

The memory system has magnetic thin films 10, having uniaxial anisotropy and deposited on, e.g., a 0.5 mil mica substrate.

Balanced word lines 12 and 14 are terminated by impedance Z1. Balanced, slotted bit lines 16 and 18 are terminated by impedance Z2. Figure-8 sense lines 20 and 22 cooperate to provide low noise characteristics in large magnetic film memories. In A, a plan view of the system is shown. In B, there is a side view. In C, there is a top view.

The figure-8 sense lines 20 and 22 can be terminated in their characteristic impedance Z0 to minimize reflections or, alternatively, they can be terminated in a short circuit. Straight sense lines can be employed at the expense of some degradation of overall performance.

The elimination of metallic substrates reduces noise on the sense lines by eliminating eddy current damping and current spreading.

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