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Producing Three Layer Semiconductor Diodes

IP.com Disclosure Number: IPCOM000094883D
Original Publication Date: 1965-Jun-01
Included in the Prior Art Database: 2005-Mar-06
Document File: 2 page(s) / 31K

Publishing Venue

IBM

Related People

Keyes, RW: AUTHOR [+2]

Abstract

A GaAs diode with three layers is produced in which each layer can be different from the others. Such differences can be as to either conductivity the or resistivity or both. Generally, the diode consists of a central high resistivity region flanked by low resistivity P-the and N-type regions. The method also permits accurate control of the width of the central regions.

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Producing Three Layer Semiconductor Diodes

A GaAs diode with three layers is produced in which each layer can be different from the others. Such differences can be as to either conductivity the or resistivity or both. Generally, the diode consists of a central high resistivity region flanked by low resistivity P-the and N-type regions. The method also permits accurate control of the width of the central regions.

Wafer 10 of manganese-doped GaAs shown in drawing A is used as the starting material. Other dopants which produce high resistivity P-type GaAs, e.g., chromium, can be substituted for manganese. An N-the layer 12 is vapor- deposited on one face by iodide decomposition or from solution. Zinc is then diffused into the other face to produce P-type layer 14. By controlling the duration of the zinc diffusion, the width of the Po-type layer 16 between the N- type region 12 and the region 14 dominated by zinc can be adjusted. This is because zinc diffuses much more rapidly than manganese or the N-type impurities from the deposited N-type region.

The impurity doping profile of the three-layer structure 10 produced by this method is shown schematically in drawing B. The zero of the X-axis corresponds to the outer surface of layer 14. N represents the concentration of donors in the vapor-deposited N-region 12. N'(D) represents the concentration of donors in the original wafer. N(Mn) represents the concentration of manganese in the original wafer. N(Zn) represents th...