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Light Emitting, Gallium Arsenide Diode

IP.com Disclosure Number: IPCOM000094888D
Original Publication Date: 1965-Jun-01
Included in the Prior Art Database: 2005-Mar-06
Document File: 2 page(s) / 31K

Publishing Venue

IBM

Related People

Michelitsch, M: AUTHOR

Abstract

The GaAs diode consists of N-type layer 1 and P-type layer 2. If a voltage is applied to contacts 3 and 4 to bias the diode in the forward direction, the PN junction emits a radiation L of light in the infrared spectral region. This occurs due to the recombination of hole-electron pairs in or near the junction region. Due to self-absorption and because of the high index of refraction, n = 3.32, the efficiency of the emitted light radiation is highly dependent on the geometric shape of the diode.

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Light Emitting, Gallium Arsenide Diode

The GaAs diode consists of N-type layer 1 and P-type layer 2. If a voltage is applied to contacts 3 and 4 to bias the diode in the forward direction, the PN junction emits a radiation L of light in the infrared spectral region. This occurs due to the recombination of hole-electron pairs in or near the junction region. Due to self-absorption and because of the high index of refraction, n = 3.32, the efficiency of the emitted light radiation is highly dependent on the geometric shape of the diode.

In order to increase the efficiency, aperture 5 is etched or ground into the center of the circular diode wafer. Thus, a thin N-type ring is formed. Its horizontal dimension corresponds approximately to the thickness of the N-type layer produced by diffusion. At the edge of aperture 5, an additional PN junction extending up to the surface is produced by which the light efficiency is further increased.

For the purpose of focussing the radiation, aperture 5 is given a parabolic shape.

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