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Browse Prior Art Database

Semiconductor Scanlaser

IP.com Disclosure Number: IPCOM000094939D
Original Publication Date: 1965-Jul-01
Included in the Prior Art Database: 2005-Mar-06
Document File: 2 page(s) / 42K

Publishing Venue

IBM

Related People

Dill, FH: AUTHOR

Abstract

The technique is for obtaining a translation of the output light of an injection laser across the length of the laser so that a semiconductor scanning device results.

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Semiconductor Scanlaser

The technique is for obtaining a translation of the output light of an injection laser across the length of the laser so that a semiconductor scanning device results.

The unit in drawing A is a GaAs laser that is made by making two simultaneous planar diffusions through a mask, not shown. The latter is apertured so that the P-type regions 2 and 4 are formed in an N-type material. The P-type layers are separated by an hourglass shaped gap as seen in drawing
B. Scanning is achieved by varying the bias applied to the P-type regions via contacts 6 and 8. The N-region is grounded.

If current is only applied to junction A, a lasing filament starts at the left portion L of the semiconductor. If current is gradually reduced at junction A while being increased at junction B, the lasing filament is progressively moved across the semiconductor. Thus, lasing occurs across the semiconductor near the center of the hourglass curve. When current is applied to junction B and not at junction A, lasing takes place to the right R of the semiconductor. By repeated changes in current as described, the lasing filament can be made to scan back and forth across the length of the diode.

Drawing B illustrates some of the minimum conditions for supporting a scanning of a lasing filament. The gap between the P-regions should be an increasing function of the unbalance between P-region light paths. The P- regions should be monotonic in their increase or decrease across...