Browse Prior Art Database

Bistable Device

IP.com Disclosure Number: IPCOM000094980D
Original Publication Date: 1965-Jul-01
Included in the Prior Art Database: 2005-Mar-06
Document File: 2 page(s) / 27K

Publishing Venue

IBM

Related People

Esaki, L: AUTHOR [+2]

Abstract

A bistable device exhibiting negative resistance characteristics and operable at cryogenic temperatures, e.g., 4.2 degrees K, is illustrated in A.

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Bistable Device

A bistable device exhibiting negative resistance characteristics and operable at cryogenic temperatures, e.g., 4.2 degrees K, is illustrated in A.

Bistable device 1, drawing A, is formed by depositing insulating film 3, e.g., aluminum oxide having an extremely small pinhole 5, on the clean surface of monocrystalline bismuth, antimony, or bismuth antimony alloy wafer 7. Metallic electrode 9 is deposited over film 3. The metallic depositant fills pinhole 5 and defines an ohmic contact at interface 11. The area of interface 11 is extremely small, i.e., approximately 10/-10/ cm/2/.

The I-V characteristics of device 1 are shown in drawing B. When a voltage source, not shown, is connected between electrode 9 and wafer 7, the operation of device 1 travels along substantially linear low resistance region RL. When current exceeds a critical value I(c), device 1 switches abruptly to high resistance region R(H) as indicated by arrow 13. Also, when current is reduced below a critical value I(V), device 1 switches to low resistance region R(L) as indicated by arrow 15. The I-V characteristics are generally ohmic in both the low and high resistance regions R(L) and R(H) and no polarity effects are evidenced. Also, device 1 is sensitive both to temperature and applied magnetic fields. For example, when subjected to magnetic fields in the order of 6000 gauss or to temperatures in excess of 5 degrees K, the negative resistance effects disappear as indicated by cur...