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Producing Chemically Etched Evaporation Masks

IP.com Disclosure Number: IPCOM000094985D
Original Publication Date: 1965-Aug-01
Included in the Prior Art Database: 2005-Mar-06
Document File: 2 page(s) / 33K

Publishing Venue

IBM

Related People

Dohm, JC: AUTHOR [+2]

Abstract

The technique is for forming pattern-defining masks formed of MYLAR* sheets and useful in vapor deposition.

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Producing Chemically Etched Evaporation Masks

The technique is for forming pattern-defining masks formed of MYLAR* sheets and useful in vapor deposition.

MYLAR sheet 1 in A has thin metallic layers 3 and 5 formed over it. Layers 3 and 5 are photolithographically etched to form registered metallic patterns defining the aperture pattern in the pattern-defining mask. Employing remaining portions of layers 3 and 5 as a resist, exposed portions of sheet 1 are removed by a compatible etchant, e.g., sulphuric acid (H(1)SO(4)), to define apertures 7. As shown in B, sheet 1 is then mounted in a metallic ring 9. Excess portions 11 of layers 3 and 5 intermediate apertures 7 and ring 9 are photolithographically etched. Exposed portions of sheet 1 tend to shrink so that the pattern mask is maintained taut within ring 9. of E. I. du Pont de Nemours & Co.

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