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Browse Prior Art Database

EuSe Light Switch

IP.com Disclosure Number: IPCOM000095040D
Original Publication Date: 1965-Aug-01
Included in the Prior Art Database: 2005-Mar-06
Document File: 2 page(s) / 32K

Publishing Venue

IBM

Related People

Argyle, BE: AUTHOR [+2]

Abstract

The light switch shown in A comprises thin crystal 1 of europium selenide (EuSe) which is maintained at 4.2 degrees K. When a light beam 2, either polarized or unpolarized, of selected wavelength is directed perpendicular to the plane of crystal 1, the transmission characteristics of crystal 1 are controlled by a magnetic field applied perpendicular to the crystal plane, indicated by H1, or parallel to the crystal plane, indicated by H2.

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EuSe Light Switch

The light switch shown in A comprises thin crystal 1 of europium selenide (EuSe) which is maintained at 4.2 degrees K. When a light beam 2, either polarized or unpolarized, of selected wavelength is directed perpendicular to the plane of crystal 1, the transmission characteristics of crystal 1 are controlled by a magnetic field applied perpendicular to the crystal plane, indicated by H1, or parallel to the crystal plane, indicated by H2.

As shown in B, when light beam 2 has a wavelength of 680 millimicros and a magnetic field H1 is applied, the intensity of the transmitted light beam 3 through crystal 1 shows large changes as the field intensity is increased between 5.? kOe and 10. 0 kOe. When left-hand circular polarized light is incident on crystal 1. the intensity of transmitted light beam 3 is substantially unchanged for magnetic fields up to 21 kOe as shown by portion I of curve?.

When right-hand circular polarized light is incident on crystal 1, light absorption by crystal 1 increases as shown by portion II of curve 5. Also, when magnetic field H2 is applied, a similar change in the transmission characteristics of crystal 1 is realized. Accordingly, the structure can be employed as a light switch or in devices having an operation based upon light amplitude modulation.

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