Browse Prior Art Database

Magnetic Memory Device

IP.com Disclosure Number: IPCOM000095043D
Original Publication Date: 1965-Aug-01
Included in the Prior Art Database: 2005-Mar-06
Document File: 2 page(s) / 57K

Publishing Venue

IBM

Related People

Shutler, WF: AUTHOR

Abstract

Three layers of magnetic film deposited about conductors form a magnetic bit storage device having closed flux characteristics. The device is essentially a sandwich of conductors and films. These are sequentially deposited so as to form closed flux films about intercept points where conductors cross. The drawing shows a device sectioned along the center of the word line.

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Magnetic Memory Device

Three layers of magnetic film deposited about conductors form a magnetic bit storage device having closed flux characteristics. The device is essentially a sandwich of conductors and films. These are sequentially deposited so as to form closed flux films about intercept points where conductors cross. The drawing shows a device sectioned along the center of the word line.

Thick substrate 1 which can be a conductive metal plate is prepared with a layer of silicon monoxide 24 A rectangle 3a of magnetic film, in the range 8, 000- 20, 000 angstroms of nickel iron, is then deposited by masking and depositing techniques.

Word line 4 is then deposited in intimate contact with film rectangle 3a and another film rectangle 3b is deposited over it. Next, a thin insulating layer 5a is deposited perpendicular to word line?. but not covering the entire rectangle of film. The bit-sense conductor 6 is deposited on insulation 5a and is covered with another layer of insulation 5b.

This forms an insulated conductor passing over the twin-film rectangle at right angles to the word conductor 4 Finally, a third rectangle 3c of magnetic film is deposited on top of the other rectangles 3a and 3b and over the insulated bit- sense conductor 6. All magnetic films are deposited in the presence of a magnetic field parallel to the word line, which induces uniaxial anisotropy in all the films.

The device is operated in the orthogonal mode. The active area is that immediate...