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Evaporant Source

IP.com Disclosure Number: IPCOM000095068D
Original Publication Date: 1965-Sep-01
Included in the Prior Art Database: 2005-Mar-06
Document File: 2 page(s) / 67K

Publishing Venue

IBM

Related People

Jacob, TF: AUTHOR [+2]

Abstract

In this evaporant source, the deposition of pinhole-free films of insulating material is facilitated.

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Evaporant Source

In this evaporant source, the deposition of pinhole-free films of insulating material is facilitated.

The source is a composite of three annular chambers. Innermost chamber 2 houses cathode 3 which is centrally mounted on flanges 5 seated on base 7. Cathode 3 is enclosed longitudinally by tantalum sleeve 11. This functions as the anode, while it is enclosed laterally by base 7 and cover 39. Mounted about anode 11 is tantalum screen 13. This, together with anode 11 forms deposition chamber 4, the upper portion 15 of which is open to permit the coating of substrate 16. The third chamber, source chamber 6, is bounded inwardly by screen 13 and outwardly by cylindrical housing 17. Radiation shields are positioned about the device to minimize heat loss. Annular shields 19 and 21 are mounted about housing 17. Planar shields 23 and 25 are disposed below base 7 in parallel spaced relation to it, while planar shield 27 is stationed above cover
39. Casing 29, about which cooling coils 31 are placed, completes the evaporant source.

To evaporate pinhole-free insulating material, source material such as silicon oxide is placed in chamber 6 and cathode 3 is activated. The electrons that are emitted from cathode 3 bombard anode 11 thus giving rise to thermal energy. The latter is transmitted via radiation to silicon oxide 33 in chamber 6. Silicon oxide 33 is vaporized and resulting vapors then flow through screen 13 and annular opening 15 in cover 39. Any partic...