Browse Prior Art Database

Lands for Planar Silicon Devices

IP.com Disclosure Number: IPCOM000095151D
Original Publication Date: 1965-Sep-01
Included in the Prior Art Database: 2005-Mar-07
Document File: 2 page(s) / 32K

Publishing Venue

IBM

Related People

Ames, I: AUTHOR [+2]

Abstract

These contact arrangements are used with planar semiconductor devices. Such arrangements eliminate metal-to-metal bonds and permit the use of dissimilar metals in the contact area. The elimination of metal-to-metal bonds results in interconnections which are more reliable. This is realized by doing away with the technical problems involved at the interface of two dissimilar metal films.

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Lands for Planar Silicon Devices

These contact arrangements are used with planar semiconductor devices. Such arrangements eliminate metal-to-metal bonds and permit the use of dissimilar metals in the contact area. The elimination of metal-to-metal bonds results in interconnections which are more reliable. This is realized by doing away with the technical problems involved at the interface of two dissimilar metal films.

Two similar arrangements which eliminate direct dissimilar metal contact are illustrated in the drawings. These show a section of a diffused planar semiconductor device. In drawing 1, a silicon wafer of N-type material has diffused N+ and P regions. A silicon dioxide film containing portions which act as a mask during diffusion overlies the surface of the silicon wafer. A strip of first metal, aluminum, for example, overlies the silicon dioxide layer and contacts the N+ region by an etched aperture in the silicon dioxide layer. An ohmic contact to the N+ region is formed by alloying the strip into the N+ region. The metallic strip can be utilized for interconnecting various components within the semiconductor wafer.

After forming the ohmic contact to the N+ region a protective layer, e. g., RF- sputtered SiO(2) or pyrolytic SiO(2) or a glass, is deposited and etched into a pattern over the surface of the silicon wafer covering the strip. An aperture is then etched in the silicon dioxide layer within the confines of the N+ region and a second metall...