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Gun Oscillator in Strained N Type Ge and Si

IP.com Disclosure Number: IPCOM000095154D
Original Publication Date: 1965-Sep-01
Included in the Prior Art Database: 2005-Mar-07
Document File: 2 page(s) / 27K

Publishing Venue

IBM

Related People

Hall, JJ: AUTHOR [+2]

Abstract

The negative resistance necessary to support the initiation and propagation of shock waves in electrical shock wave devices formed of semiconductor crystals arises from electric field-induced transfer of conduction electrons from a high mobility valley, conduction band, to a low mobility valley, conduction band, at a higher energy. This results in a well-defined threshold electric field above which negative resistance occurs.

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Gun Oscillator in Strained N Type Ge and Si

The negative resistance necessary to support the initiation and propagation of shock waves in electrical shock wave devices formed of semiconductor crystals arises from electric field-induced transfer of conduction electrons from a high mobility valley, conduction band, to a low mobility valley, conduction band, at a higher energy. This results in a well-defined threshold electric field above which negative resistance occurs.

A class of multivalleyed semiconductor materials, e.g., germanium (Ge), silicon (Si), and gallium phosphide (GaP), is characterized in that all conduction bands are ordinarily at the same energy. The orientation of electric fields applied to a multivalleyed semiconductor crystal can be chosen such that conduction electrons have a higher mobility micron in some valleys and a lower mobility micron 2 in other valleys. A single high mobility valley V1 and a single low mobility valley V2 are shown in A. Applied electric fields cause only a gradual transfer of conduction electrons from valley V1 to valley V2 sufficient only to increase the resistance of the crystal but insufficient to induce negative resistance.

However, when the crystal is subjected to uniaxial strain in a preferred direction, an energy difference E between valleys V1 and V2 is produced as shown in B. The electron population of valley V1 increases while that of valley V2 decreases. This results in a higher net mobility for the conductio...