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Ohmic Contact for Silicon Carbide Semiconductor

IP.com Disclosure Number: IPCOM000095162D
Original Publication Date: 1965-Sep-01
Included in the Prior Art Database: 2005-Mar-07
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Jansen, HG: AUTHOR [+2]

Abstract

An ohmic contact is provided for a silicon carbide, SiC, semiconductor component which consists of an alloy of 60%-90% Au, 5%-30% Ta and 5%-30% Pt or Pd. The alloy is fused upon the SiC single crystal. An especially advantageous alloy for the ohmic contact consists of 80% Au, 10% Ta and 10% Pt or Pd. The largest Pt percentage increases the associated operating temperature by as much as 100 degrees C. For P-type SiC, a small quantity of Al, e. g., 0. 5%-1%, is desirably added to the ohmic contact alloy.

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Ohmic Contact for Silicon Carbide Semiconductor

An ohmic contact is provided for a silicon carbide, SiC, semiconductor component which consists of an alloy of 60%-90% Au, 5%-30% Ta and 5%-30% Pt or Pd. The alloy is fused upon the SiC single crystal. An especially advantageous alloy for the ohmic contact consists of 80% Au, 10% Ta and 10% Pt or Pd. The largest Pt percentage increases the associated operating temperature by as much as 100 degrees C. For P-type SiC, a small quantity of Al, e. g., 0. 5%-1%, is desirably added to the ohmic contact alloy.

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