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Epitaxial Growth of Semiconductors

IP.com Disclosure Number: IPCOM000095163D
Original Publication Date: 1965-Sep-01
Included in the Prior Art Database: 2005-Mar-07
Document File: 2 page(s) / 26K

Publishing Venue

IBM

Related People

Liebmann, W: AUTHOR

Abstract

This method epitaxially grows semiconductors with large energy gaps, such as SiC BN BP AlH or AlP, which do not melt easily under controllable conditions. A melt serving as a solvent is used with a temperature gradient having components both perpendicular and parallel to the growth surface. In the method, the positive direction of a temperature gradient is toward a higher temperature region from a lower temperature region.

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Epitaxial Growth of Semiconductors

This method epitaxially grows semiconductors with large energy gaps, such as SiC BN BP AlH or AlP, which do not melt easily under controllable conditions. A melt serving as a solvent is used with a temperature gradient having components both perpendicular and parallel to the growth surface. In the method, the positive direction of a temperature gradient is toward a higher temperature region from a lower temperature region.

Single crystal wafer 1 of silicon carbide, SiC, has planar polished upper surface 2. It serves as an SiC source for an epitaxially grown layer on SiC of seed 3. The lower surface of seed 3 is also planar and polished. Fragments 4 of pure chromium are placed adjacent edge 5 between SiC wafers 1 and 3 and are melted by a thermal field. The temperature gradient 6 of the thermal field passes diagonally through the composite structure. Temperature gradient 6 has component 7 perpendicular to contact surface 2 and component 8 parallel to such surface.

Molten chromium migrates in the direction of component 8 and through surface tension wets the adjacent planar surfaces on wafers 1 and 3. SiC is dissolved from wafer 1 into the chromium layer and migrates toward wafer 3 under stimulus of component 7. Consequently, an epitaxial layer of SiC is grown on wafer 3. The chromium layer between wafers 1 and 3 is very thin. Therefore, any decrease in concentration of dissolved SiC is very rapidly compensated by increased dissolu...