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Polishing of Silicon Carbide

IP.com Disclosure Number: IPCOM000095172D
Original Publication Date: 1965-Sep-01
Included in the Prior Art Database: 2005-Mar-07
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Liebmann, W: AUTHOR [+2]

Abstract

In fabricating silicon carbide, SiC, semiconductor components, PN junctions are commonly produced on carefully polished and cleaned surfaces. This method utilizes the high-energy lattice planes of silicon carbide, i. e., the (311) plane.

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Polishing of Silicon Carbide

In fabricating silicon carbide, SiC, semiconductor components, PN junctions are commonly produced on carefully polished and cleaned surfaces. This method utilizes the high-energy lattice planes of silicon carbide, i. e., the (311) plane.

Both mechanical and chemical fine-polishing are more readily accomplished in high-energy lattice planes. Further, the chemical fine-polishing does not result in etching pits having surfaces extending in the direction of a high-energy lattice plane. Additionally as a consequence of this procedure, other subsequent process steps in preparation of silicon carbide such as those of etching certain given areas, of diffusing, of alloying or of doping are also accelerated and simplified. The results of such process steps are better reproducible.

It is impossible to cleave single crystals of silicon carbide along high-energy lattice planes. The grinding technique requires measures for insuring coincidence of the ground section with the crystallographic lattice plane.

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