Browse Prior Art Database

Fabricating Integrated Circuits

IP.com Disclosure Number: IPCOM000095173D
Original Publication Date: 1965-Sep-01
Included in the Prior Art Database: 2005-Mar-07
Document File: 2 page(s) / 37K

Publishing Venue

IBM

Related People

Regh, J: AUTHOR

Abstract

This method fabricates integrated circuits of semiconductor material such as silicon. A monocrystalline layer of N-type silicon, 4-5 micron thick, is epitaxially grown on an N/+/ type silicon substrate, 2-3 mils thick. Subsequently, an insulating layer such as silicon dioxide is grown, 10-15 micron thick, on the N-type silicon layer as in A.

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Fabricating Integrated Circuits

This method fabricates integrated circuits of semiconductor material such as silicon. A monocrystalline layer of N-type silicon, 4-5 micron thick, is epitaxially grown on an N/+/ type silicon substrate, 2-3 mils thick. Subsequently, an insulating layer such as silicon dioxide is grown, 10-15 micron thick, on the N- type silicon layer as in A.

The wafer is inverted and an insulating layer such as silicon dioxide, 5, 000 angstroms thick, is deposited on the surface of the N/+/ silicon layer. Subsequently, by photolithographic masking and etching techniques, channels are formed in the silicon dioxide insulating layer. The latter serves as a masking layer as in B for a subsequent etching operation. Channels are then etched in the N/+/ and N-type layers down to the SiO(2) layer forming islands of semiconductor material as in C. The masking SiO(2) layer is then etched away or otherwise removed.

A thick layer of insulating material such as silicon dioxide as in D is deposited over and between the islands of semiconductor material. Alternatively, a thin layer of silicon dioxide is deposited over the islands of semiconductor material followed by growing a thick polycrystalline silicon layer as in E. The wafer is again inverted and the silicon dioxide surface layer is etched away. N-type regions of each semiconductor island are exposed as in F. Subsequent diffusions of both emitter and base regions using the N-region as a collector forms tra...