Browse Prior Art Database

Surface Channel Device of InSb Utilizing Anodized Oxide

IP.com Disclosure Number: IPCOM000095252D
Original Publication Date: 1965-Oct-01
Included in the Prior Art Database: 2005-Mar-07
Document File: 2 page(s) / 31K

Publishing Venue

IBM

Related People

Chang, LL: AUTHOR [+2]

Abstract

The field effect transistor comprises P-type wafer 1 formed of indium antimonide (InSb) having N-type source and drain diffusions 3 and 5. Insulating oxide layer 7 is anodically formed over the surface of wafer 1, for example, in a 0.1N solution of potassium hydroxide (KOH). Layer 7 can be advantageously employed as a diffusion mask by forming windows 9 and 11 by the usual photolithographic techniques.

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Surface Channel Device of InSb Utilizing Anodized Oxide

The field effect transistor comprises P-type wafer 1 formed of indium antimonide (InSb) having N-type source and drain diffusions 3 and 5. Insulating oxide layer 7 is anodically formed over the surface of wafer 1, for example, in a
0.1N solution of potassium hydroxide (KOH). Layer 7 can be advantageously employed as a diffusion mask by forming windows 9 and 11 by the usual photolithographic techniques.

To form N-type diffusions in wafer 1, tellurium (Te) and tin (Sn) are suitable dopants. Alternatively, to form a PNP type structure, zinc (Zn) and cadmium (Ca) are suitable P-type dopants in a P-type indium antimonide wafer 1. Gate electrode 13 is metallized over layer 7 and registered with the surface portion of wafer 1 intermediate electrodes 3 and 5.

The use of indium antimonide is desirable in surface-channel devices because of its high mobility. Also, layer 7, When formed anodically, has the advantage over both thermally-grown and sputtered oxide layers in that it avoids the effect of thermal conversion and damage to the surface of wafer 1.

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