Browse Prior Art Database

FET Gate Structure

IP.com Disclosure Number: IPCOM000095253D
Original Publication Date: 1965-Oct-01
Included in the Prior Art Database: 2005-Mar-07
Document File: 2 page(s) / 36K

Publishing Venue

IBM

Related People

Hochberg, F: AUTHOR

Abstract

This insulated-gate field effect transistor comprises P-type wafer 1 having diffused N-type source and drain electrodes 3 and 5. Thin insulating layer 7 is formed over the surface of wafer 1. Metallizations 9 and 11 extend through layer 7 to operatively connect electrodes 3 and 5, respectively. Gate metallization 13 is formed in split fashion to define switching gate electrode 15 and auxiliary gate electrode 17.

This text was extracted from a PDF file.
At least one non-text object (such as an image or picture) has been suppressed.
This is the abbreviated version, containing approximately 100% of the total text.

Page 1 of 2

FET Gate Structure

This insulated-gate field effect transistor comprises P-type wafer 1 having diffused N-type source and drain electrodes 3 and 5. Thin insulating layer 7 is formed over the surface of wafer 1. Metallizations 9 and 11 extend through layer 7 to operatively connect electrodes 3 and 5, respectively. Gate metallization 13 is formed in split fashion to define switching gate electrode 15 and auxiliary gate electrode 17.

Electrode 15 is connected to signal source 19. Electrode 17 is purposefully positioned over drain junction 21 and connected to constant voltage source 23, e.g., drain bias voltage. Electrode 17, when biased, reduces the normal component of electrical fields due to electrode 15 at junction 21 and, accordingly, increases the reverse breakdown voltage of junction 21.

Also, since a portion of the surface of wafer 1 can be inverted by auxiliary gate electrode bias, source-drain current I is singularly controlled by electrode
15. The effective length of the conduction channel is controllably reduced by the geometrical length of electrode 17. Thus, increased transconductance g and higher frequency operation are obtained.

1

Page 2 of 2

2

[This page contains 1 picture or other non-text object]