Browse Prior Art Database

Indium Superconductive Film Stores

IP.com Disclosure Number: IPCOM000095261D
Original Publication Date: 1965-Oct-01
Included in the Prior Art Database: 2005-Mar-07
Document File: 2 page(s) / 44K

Publishing Venue

IBM

Related People

Blumberg, RH: AUTHOR [+3]

Abstract

An indium film is deposited on insulating substrate 2 to form superconductive conductive memory cells. The substrate is maintained at a temperature of 20 degrees C. Indium 10 is heated to its melting point by RF generator 14. The vacuum chamber 6 is maintained at a pressure less than 5 x 10/-6/ Torr. The partial pressure of oxygen is kept under 5 x 10/-8/ Torr. Rate monitor 18 maintains a constant deposition rate of between 40-80 A/sec. during deposition. Meter 19 continuously measures the conductance of the deposited indium by test film 7. Deposition is discontinued when the conductance of film 7 reaches a value of 0.5 to 1.0 mho/sq.

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Indium Superconductive Film Stores

An indium film is deposited on insulating substrate 2 to form superconductive conductive memory cells. The substrate is maintained at a temperature of 20 degrees C. Indium 10 is heated to its melting point by RF generator 14. The vacuum chamber 6 is maintained at a pressure less than 5 x 10/-6/ Torr. The partial pressure of oxygen is kept under 5 x 10/-8/ Torr. Rate monitor 18 maintains a constant deposition rate of between 40-80 A/sec. during deposition. Meter 19 continuously measures the conductance of the deposited indium by test film 7. Deposition is discontinued when the conductance of film 7 reaches a value of 0.5 to 1.0 mho/sq.

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