Browse Prior Art Database

Repair of Mask Caused Defects in a Positive Working Photoresist Pattern

IP.com Disclosure Number: IPCOM000095288D
Original Publication Date: 1965-Nov-01
Included in the Prior Art Database: 2005-Mar-07
Document File: 2 page(s) / 29K

Publishing Venue

IBM

Related People

Kaplan, LH: AUTHOR [+2]

Abstract

The technique is for repairing mask-caused faults in a resist pattern formed of positive photoresist material, e. g., AZ 1350, a product of Shipley Co. With positive photoresist material, UV irradiation produces solubilization. Electron beam irradiation renders prior-exposed material insoluble.

This text was extracted from a PDF file.
At least one non-text object (such as an image or picture) has been suppressed.
This is the abbreviated version, containing approximately 100% of the total text.

Page 1 of 2

Repair of Mask Caused Defects in a Positive Working Photoresist Pattern

The technique is for repairing mask-caused faults in a resist pattern formed of positive photoresist material, e. g., AZ 1350, a product of Shipley Co. With positive photoresist material, UV irradiation produces solubilization. Electron beam irradiation renders prior-exposed material insoluble.

As shown in A, a thin layer of positive photoresist material 1 is exposed to UV irradiation through a mask plate to define a particular resist pattern, e. g., resist lines 2 and 3. The resulting resist pattern can include certain mask-caused faults, for example, break fault 4 along resist line 2 or bridge fault 5 between resist lines 2 and 3.

As shown in B, break fault 4 is corrected by subjecting portion 6 of reacted photoresist material to electron beam irradiation so as to be rendered insoluble and complete resist line 2. To correct bridge fault 5, portion 7 of unreacted photoresist material is exposed to ultraviolet irradiation so as to be rendered soluble. Break and bridge faults 4 and 5 can be located by microscope optical inspection of the mask plate. Subsequently, the resist pattern is developed to remove reacted, or soluble, portions of photoresist material 1 so that only resist lines 2 and 3 remain.

1

Page 2 of 2

2

[This page contains 2 pictures or other non-text objects]