Browse Prior Art Database

Variable Gain Storage Element

IP.com Disclosure Number: IPCOM000095307D
Original Publication Date: 1965-Nov-01
Included in the Prior Art Database: 2005-Mar-07
Document File: 2 page(s) / 45K

Publishing Venue

IBM

Related People

Lange, LK: AUTHOR [+2]

Abstract

Variable gain storage can be accomplished in the storage element by using the number or intensity of bit disturb pulses as the information carrier.

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Variable Gain Storage Element

Variable gain storage can be accomplished in the storage element by using the number or intensity of bit disturb pulses as the information carrier.

The element consists of a conductive substrate coated with a retentive magnetic material. It is capable of assuming an infinite number of stable states along a preferred axis of magnetism around retentive magnetic material. It is capable of assuming an infinite number of stable states along a preferred axis of magnetism around the aperture being limited by a positive saturation state and a negative saturation state. The element can be set to a desired one of the states by selective application of bit disturb pulses. The particular state to which it is set may be determined nondestructively by the application of a nondestructive readout NDRO drive pulse through the conductive substrate. This NDRO drive pulse attempts to switch the stored flux away from the preferred axis of magnetism in a known manner.

In operation, the element is set to a desired one of its infinite number of magnetic states, somewhere between positive saturation and negative saturation, by an appropriate set of disturb pulses. It thereafter is subject to nondestructive readouts to serve as an analog storage element.

The device is logarithmic in character as shown in the lower drawing. A single disturb varies its magnetic state by one unit. A set of three disturbs varies its magnetic state by two units. A set of 300 distu...