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Browse Prior Art Database

Integrated Semiconductor Device

IP.com Disclosure Number: IPCOM000095394D
Original Publication Date: 1965-Dec-01
Included in the Prior Art Database: 2005-Mar-07
Document File: 2 page(s) / 69K

Publishing Venue

IBM

Related People

Healy, AM: AUTHOR

Abstract

In this integrated semiconductor device, a plurality of semiconductor devices is electrically isolated from each other.

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Integrated Semiconductor Device

In this integrated semiconductor device, a plurality of semiconductor devices is electrically isolated from each other.

In drawing A, a network of etched channels is formed, such as by etching, in the substrate 1 composed of monocrystalline semiconductor material. Preferably, the substrate is formed of monocrystalline silicon. In B, a surface layer region 2 containing a high impurity concentration of one type conductivity is formed either by epitaxial growth or by diffusion techniques. Such provides the channeled surface of the substrate with low resistivity region 2. In drawing C, a dielectric layer 3, such as a layer of silicon dioxide, is formed or deposited on low resistivity surface region 2.

In D, an insulating layer 4 of very hard material, such as a layer of silicon carbide, is grown on dielectric layer 3. A support layer 5, such as a layer of polycrystalline silicon, is grown on silicon carbide layer 4 as in E.

In drawing F, the original semiconductor substrate material is removed, such as by mechanical lapping techniques, to the level where the hard material layer is first contacted. The silicon carbide material is used as a guide or mechanical stop for forming isolated regions of semiconductor material. Now, separate collector, emitter, and base regions can be formed in each of the isolated semiconductor regions by the usual diffusion techniques.

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