Browse Prior Art Database

Ambipolar Negative Resistance Device Produced by Single Diffusion into GaAs

IP.com Disclosure Number: IPCOM000095395D
Original Publication Date: 1965-Dec-01
Included in the Prior Art Database: 2005-Mar-07
Document File: 2 page(s) / 27K

Publishing Venue

IBM

Related People

Weiser, K: AUTHOR [+2]

Abstract

A negative resistance device is attained which has identical current-voltage characteristics for either current direction as shown in A. The current-voltage curve is typical for operation at 77 degrees K. The general behavior persists at least up to room temperature, although with increasing current before the onset of the negative resistance. The device, as shown in B, is fabricated by diffusing zinc into a manganese doped GaAs slab 2, producing zinc-rich layers 4 and 6 on opposite faces of the slab. Typical dimensions are indicated.

This text was extracted from a PDF file.
At least one non-text object (such as an image or picture) has been suppressed.
This is the abbreviated version, containing approximately 100% of the total text.

Page 1 of 2

Ambipolar Negative Resistance Device Produced by Single Diffusion into GaAs

A negative resistance device is attained which has identical current-voltage characteristics for either current direction as shown in A. The current-voltage curve is typical for operation at 77 degrees K. The general behavior persists at least up to room temperature, although with increasing current before the onset of the negative resistance. The device, as shown in B, is fabricated by diffusing zinc into a manganese doped GaAs slab 2, producing zinc-rich layers 4 and 6 on opposite faces of the slab. Typical dimensions are indicated.

While characteristics of the general form shown in A have been obtained previously, they have not been produced in structures which are all of one conductivity type. Voltage probe measurements along the device of B with current flowing through it, when carried out as a function of temperature, indicate that the structure is P-type throughout. These measurements show that there exist thin, high resistivity layers at the interfaces between the zinc-rich surface layers and the central region. These high resistivity regions are dominated by manganese just as the central region is and, since both zinc and manganese are acceptors in GaAs, the entire device is P-type.

1

Page 2 of 2

2

[This page contains 2 pictures or other non-text objects]