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Browse Prior Art Database

Semiconductor Fabrication

IP.com Disclosure Number: IPCOM000095403D
Original Publication Date: 1964-Jan-01
Included in the Prior Art Database: 2005-Mar-07
Document File: 2 page(s) / 46K

Publishing Venue

IBM

Related People

Hallen, RL: AUTHOR [+5]

Abstract

Lateral spread is overcome and good definition and resolution are achieved with a process for etching miniature apertures in glass semiconductor devices.

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Semiconductor Fabrication

Lateral spread is overcome and good definition and resolution are achieved with a process for etching miniature apertures in glass semiconductor devices.

Semiconductor wafer 2 has a silicon oxide layer 4 superimposed over its surface. A glass layer 6, in turn, superimposed over layer 4, is coated with metal layer 8. Coating 8 is a product of vacuum evaporation, sputtering, cathode plating or thermal composition. The requirement of the deposition is that the metal film is adherent and continuous and insoluble in the etchant used for the glass.

Over film 8, photoresist 10 is placed and selectively exposed to light. Those areas of photoresist 10 not exposed to light are then removed leaving areas, e.
g., of photoresist 10' and regions of exposed metal such as 11.

Ferric chloride, or other etch appropriate for the metal used, is then applied to chemically etch and remove metal areas 11, to expose glassed areas 7 of layer 6 between stripes of metal 8' capped with layers of photoresist 10'.

Glassed regions 7 are then etched with a vapor solution of hydrofluoric acid and water, bubbled through with commercially pure nitrogen. This provides exposed regions 5 of silicon oxide between alternate stripes composed of glass 6', metal 8' and photoresist 10'.

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